IdentificationPhysical DataSpectraRoute of Synthesis (ROS)Safety and HazardsOther Data
Identification
Product NametriethylindiumIUPAC NametriethylindiganeMolecular StructureCAS Registry Number 923-34-2EINECS Number213-095-0Synonyms3-Pyridinamin;3-Pyridinamine;3-Pyridinamine;pyridin-3-amine;T6NJ CZ;3- Aminopyridine;3-Amino-pyridine;3-pyridylamine;Amino-3 pyridine;m-Aminopyridine;MS/MS-1064463;Pyridin-3-ylamine;Pyridine, 3-amino-;β-Aminopyridine462-08-8Molecular FormulaC6H15InMolecular Weight202g/mol InChIInChI=1S/3C2H5.In/c3*1-2;/h3*1H2,2H3InChI KeyOTRPZROOJRIMKW-UHFFFAOYSA-NIsomeric SMILESCC(CC)CC
Patent InformationPatent IDTitlePublication DateWO2014/78263METHODS OF PRODUCING TRIMETHYLGALLIUM2014US2004/122248Preparation of organometal compounds2004US2003/191333Trialkylindium preparation2003
Physical Data
No data available
Melting Point, °C -32
Density, g·cm-3Reference Temperature, °CMeasurement Temperature, °C1.26420
Description (Association (MCS))Solvent (Association (MCS))AdsorptionCCl4Adsorptionindium antimonideAdsorptionGaAs(100)
Spectra
Description (NMR Spectroscopy)Nucleus (NMR Spectroscopy)Solvents (NMR Spectroscopy)Temperature (NMR Spectroscopy), °C Chemical shifts, Spectrum1Hbenzene-d625Chemical shifts, Spectrum1H(2)H8-toluene25
Description (UV/VIS Spectroscopy)Comment (UV/VIS Spectroscopy)Spectrum190 nm - 390 nmAbsorption maximaRatio of solvents: 0.1N
Route of Synthesis (ROS)
Route of Synthesis (ROS) of triethylindium CAS 923-34-2
ConditionsYieldWith tris-(dibenzylideneacetone)dipalladium(0); tris(2-thienyl)phosphine In tetrahydrofuran at 60℃; for 4h; Inert atmosphere;Experimental ProcedureGeneral procedure: 4-Tosyloxyquinazoline derivatives 2 were obtained by using our reported method.5e A solution of quinazolin-4-ones 1 (0.2 mmol) in THF (2 mL) was treated with TsCl (1.2 equiv) and K2CO3 (3.0 equiv) at 60 °C. Upon completion of the reaction as indicated by TLC, the solvent was evaporated and the residue was purified on silica gel to give product 2. To a mixture of 4-tosyloxyquinazoline 2 (0.20 mmol) and organoindium reagent9 3 (1.0 equiv) in anhydrous THF (2.0 mL), Pd2(dba)3 (1 mol%) and (2-furyl)3P (2 mol%) were added. The mixture was stirred and heated at 60 °C under N2. Upon completion of the reaction as indicated by TLC, the solvent was evaporated. The residue was then diluted with EtOAc (10 mL), washed with H2O (10 mL), and dried with anhydrous MgSO4. Evaporation of the solvent followed by purification on silica gel (PE-EtOAc, 50:1 to 20:1) provided the corresponding product 4.73%
Safety and Hazards
Pictogram(s)SignalDangerGHS Hazard StatementsH250 (100%): Catches fire spontaneously if exposed to air H314 (97.44%): Causes severe skin burns and eye damage Precautionary Statement CodesP210, P222, P231, P233, P260, P264, P280, P301+P330+P331, P302+P335+P334, P302+P361+P354, P304+P340, P305+P354+P338, P316, P321, P363, P370+P378, P405, and P501(The corresponding statement to each P-code can be found at the GHS Classification page.)
Other Data
Shelf Life1 year
DruglikenessLipinski rules componentMolecular Weight202.005logP2.658HBA0HBD0Matching Lipinski Rules4Veber rules componentPolar Surface Area (PSA)0Rotatable Bond (RotB)3Matching Veber Rules2
Use Patterntriethylindium CAS#: 923-34-2 is a key precursor in thin film deposition technologies like CVD and ALD. It is used to deposit high-quality indium compound films in the semiconductor industry and other fields.Triethylindium can be employed in the preparation of indium compound films for use in optoelectronic devices, including solar cells and light-emitting diodes (LEDs). And Triethylindium is a crucial precursor in the semiconductor industry, used for depositing indium compound films, such as indium gallium alloys (InGaAs). These films have important applications in electronic devices and optoelectronics, such as high-electron-mobility transistors (HEMTs) and laser devices.Triethylindium is also utilized in metalorganic chemistry as an organometallic precursor, participating in some organic synthesis reactions.
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