Power chips in EVs, RF chips in 5G base stations, and power devices in solar inverters all face the same problem: as power density climbs and components shrink, what bonds a chip to its metal substrate has to conduct current, pull heat away fast, and survive years of thermal cycling between -40°C and 200°C without cracking — this is the packaging-materials challenge ChemWhat focuses on. Traditional gold-tin solder and tin paste have limited thermal conductivity and demanding process temperatures, and with GaN and SiC chips they often can’t dissipate heat fast enough, causing throttling, burnout, or interface cracking under repeated thermal cycling. ChemWhat’s answer is a family of differently formulated conductive adhesives, silver pastes, and copper pastes matched to each application: a single-component epoxy silver adhesive for low-to-medium-power LEDs and consumer ICs, low-cure and warp-free; a modified-polyurethane LCM adhesive for displays, with minimal bleed-through an...
I. Power Semiconductor Upgrades Drive Encapsulation Material Innovation With the rapid adoption of third-generation semiconductors (SiC, GaN), high-power IGBT modules, and automotive-grade power devices, operating current densities and junction temperatures of chips are continuously rising. Traditional tin-based solders (e.g., AuSn, SAC) are increasingly reaching their limits in terms of thermal conductivity, high-temperature reliability, and resistance to thermal fatigue. The industry broadly recognizes that: High-Voltage, High-Frequency, and High-Power Density Applications: (e.g., photovoltaic inverters, rail transit, smart grids, and new energy vehicle driving/charging systems) impose more stringent requirements for the thermal conductivity and junction temperature control of encapsulation materials. High Aspect Ratio Chips: (e.g., GaN RF devices with aspect ratios up to 5:1 or 6:1) are prone to new issues such as stress concentration and sintering delamination under ...