IdentificationPhysical DataSpectraRoute of Synthesis (ROS)Safety and HazardsOther Data
Identification
Product NameTETRAVINYLSILANEIUPAC Nametetrakis(ethenyl)silane Molecular StructureCAS Registry Number 1112-55-6EINECS Number2214-192-0MDL NumberMFCD00008607SynonymsTetravinylsilane1112-55-6Silane, tetraethenyl-tetrakis(ethenyl)silaneSilane, tetravinyl-tetraethenylsilaneTQO34MU4LJNSC-11326292717-78-7tetravinyl silanetetravinyl-silaneEINECS 214-192-0NSC113262NSC 113262Tetravinylsilane, 97%UNII-TQO34MU4LJTETRAETHYLENESILICON(CH2=CH)4SiDTXSID6061490MFCD00008607AKOS028110984AS-44343NS00044351J-002546Molecular FormulaC8H12SiMolecular Weight136.27InChIInChI=1S/C8H12Si/c1-5-9(6-2,7-3)8-4/h5-8H,1-4H2InChI KeyUFHILTCGAOPTOV-UHFFFAOYSA-NIsomeric SMILESCC=C(C=C)(C=C)C=C
Patent InformationPatent IDTitlePublication DateJP2020/79219METHOD FOR PRODUCING TETRAALKENYLSILANE2020US2014/296468Hydrosilylation Reaction Catalysts and Curable Compositions and Methods for Their Preparation and Use2014
Physical Data
Appearanceclear liquid
Boiling Point, °CPressure (Boiling Point), Torr125130.6130.2746.1
Density, g·cm-3Reference Temperature, °CMeasurement Temperature, °C0.9970.79844200.79264250.8420
Spectra
Description (NMR Spectroscopy)Nucleus (NMR Spectroscopy)Solvents (NMR Spectroscopy)Frequency (NMR Spectroscopy), MHzChemical shifts1H400.1Spectrum29Sivarious solvent(s)59Chemical shifts13CCDCl3Chemical shifts13CChemical shifts29Si
Description (IR Spectroscopy)BandsSpectrum
Route of Synthesis (ROS)
Route of Synthesis (ROS) of TETRAVINYLSILANE CAS 1112-55-6
ConditionsYieldWith palladium(II) acetylacetonate; potassium fluoride In N,N-dimethyl-formamide at 130℃; under 1500.15 Torr; for 3h; Reagent/catalyst; Time; Hiyama Coupling; Inert atmosphere;Experimental ProcedureGeneral procedure: A mixture of organohalides (1a-h) (0.25mmol), vinysilanes 2a (0.3mmol) or 2c (0.075mmol), potassium fluoride (0.6mmol), and supported palladium NPs catalyst (Pd/substrate ratio 1mol%) was suspended in DMF (1ml). Then, the flask was evacuated under vacuum and refilled with argon. The evacuation/refilling cycle was repeated three times (pressure 2bar). The mixture was stirred at 130°C, and the reaction was monitored by GC and GC-MS. The reaction was performed for the time required ranging from 1.5 to 24h, to obtain the maximum yield of 3a-h products.93%
Safety and Hazards
Pictogram(s)SignalDangerGHS Hazard StatementsH225 (100%): Highly Flammable liquid and vapor H315 (74.51%): Causes skin irritation H319 (74.51%): Causes serious eye irritation H332 (19.61%): Harmful if inhaled H335 (100%): May cause respiratory irritation H361 (23.53%): Suspected of damaging fertility or the unborn child H400 (23.53%): Very toxic to aquatic life H410 (23.53%): Very toxic to aquatic life with long lasting effects Precautionary Statement CodesP203, P210, P233, P240, P241, P242, P243, P261, P264, P264+P265, P271, P273, P280, P302+P352, P303+P361+P353, P304+P340, P305+P351+P338, P317, P318, P319, P321, P332+P317, P337+P317, P362+P364, P370+P378, P391, P403+P233, P403+P235, P405, and P501(The corresponding statement to each P-code can be found at the GHS Classification page.)
Other Data
DruglikenessLipinski rules componentMolecular Weight136.269logP3.544HBA0HBD0Matching Lipinski Rules4Veber rules componentPolar Surface Area (PSA)0Rotatable Bond (RotB)4Matching Veber Rules2
Use PatternTetraethoxysilane plays significant roles in semiconductor, photovoltaic, surface modification, and nanotechnology fields. Tetraethoxysilane can be employed in chemical vapor deposition (CVD) processes for the growth of silicon films, which are utilized in the semiconductor industry for integrated circuit fabrication.
https://www.chemwhat.com/tetravinylsilane-cas-1112-55-6/
Comments
Post a Comment