IdentificationPhysical DataSpectraRoute of Synthesis (ROS)Safety and HazardsOther Data
Identification
Product NameTETRAKIS(ETHYLMETHYLAMINO)HAFNIUM IUPAC Nameethyl(methyl)azanide;hafnium(4+) Molecular StructureCAS Registry Number 352535-01-4MDL NumberMFCD03427130Synonyms352535-01-4Tetrakis(ethylmethylamino)hafniumEthanamine, N-methyl-, hafnium(4+) salt (4:1)ethyl(methyl)azanide;hafnium(4+)MFCD03427130SCHEMBL237323Hafnium tetrakis(ethylmethylamide)Tetrakis(ethylmethylamido)hafnium(IV)Tetrakis(ethylmethylamino)hafnium 99.999%Tetrakis(ethylmethylamido)hafnium(IV), >=99.99% trace metals basisTetrakis(ethylmethylamido)hafnium(IV), packaged for use in deposition systemsMolecular FormulaC12H32HfN4Molecular Weight410.9InChIInChI=1S/4C3H8N.Hf/c4*1-3-4-2;/h4*3H2,1-2H3;/q4*-1;+4 InChI KeyNPEOKFBCHNGLJD-UHFFFAOYSA-NIsomeric SMILESCCC.CCC.CCC.CCC.
Physical Data
AppearanceColorless liquid
Spectra
No data available
Route of Synthesis (ROS)
Route of Synthesis (ROS) of TETRAKIS(ETHYLMETHYLAMINO)HAFNIUM CAS 352535-01-4
ConditionsYieldIn water-d2 grown by ALD on p-type (100) Si substrate;
Safety and Hazards
Pictogram(s)SignalDangerGHS Hazard StatementsH225 (100%): Highly Flammable liquid and vapor H261 (75.78%): In contact with water releases flammable gas H302 (17.19%): Harmful if swallowed H311 (17.19%): Toxic in contact with skin H314 (25%): Causes severe skin burns and eye damage H315 (75%): Causes skin irritation H319 (75%): Causes serious eye irritation H331 (17.19%): Toxic if inhaled H335 (100%): May cause respiratory irritation Precautionary Statement CodesP210, P231+P232, P233, P240, P241, P242, P243, P260, P261, P262, P264, P264+P265, P270, P271, P280, P301+P317, P301+P330+P331, P302+P352, P302+P361+P354, P303+P361+P353, P304+P340, P305+P351+P338, P305+P354+P338, P316, P319, P321, P330, P332+P317, P337+P317, P361+P364, P362+P364, P363, P370+P378, P402+P404, P403+P233, P403+P235, P405, and P501(The corresponding statement to each P-code can be found at the GHS Classification page.)
Other Data
Shelf Life1 year
DruglikenessLipinski rules componentMolecular Weight414.935HBA4HBD0Matching Lipinski Rules3Veber rules componentPolar Surface Area (PSA)12.96Rotatable Bond (RotB)8Matching Veber Rules2
Use PatternTETRAKIS(ETHYLMETHYLAMINO)HAFNIUM CAS 352535-01-4 is a common metal-organic precursor used in thin film deposition in the semiconductor industry. It is employed for the deposition of high-quality HfO2 (hafnium oxide) thin films, which are crucial in manufacturing high-dielectric constant materials and Metal-Insulator-Semiconductor Field-Effect Transistors (MISFETs).
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