I. Power Semiconductor Upgrades Drive Encapsulation Material Innovation With the rapid adoption of third-generation semiconductors (SiC, GaN), high-power IGBT modules, and automotive-grade power devices, operating current densities and junction temperatures of chips are continuously rising. Traditional tin-based solders (e.g., AuSn, SAC) are increasingly reaching their limits in terms of thermal conductivity, high-temperature reliability, and resistance to thermal fatigue. The industry broadly recognizes that: High-Voltage, High-Frequency, and High-Power Density Applications: (e.g., photovoltaic inverters, rail transit, smart grids, and new energy vehicle driving/charging systems) impose more stringent requirements for the thermal conductivity and junction temperature control of encapsulation materials. High Aspect Ratio Chips: (e.g., GaN RF devices with aspect ratios up to 5:1 or 6:1) are prone to new issues such as stress concentration and sintering delamination under ...
Chemistry and Biology insights